- 您现在的位置：买卖IC网 > Sheet目录395 > ATP212-TL-H (ON Semiconductor)MOSFET N-CH 60V 35A ATPAK
ATP212
35
30
Tc=25 ° C
Single pulse
ID -- VDS
3.5V
60
50
VDS=10V
Single pulse
ID -- VGS
25
3.0V
40
20
30
15
20
10
5
VGS=2.5V
10
0
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
0
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
Drain-to-Source Voltage, VDS -- V
Gate-to-Source Voltage, VGS -- V
55
50
45
RDS(on) -- VGS
IT14741
Tc=25 ° C
Single pulse
55
50
45
RDS(on) -- Tc
IT14742
Single pulse
40
ID=5A
9A
40
=5A
4.0V
VGS
9A
I D=
5V,
=4.
18A
0V, D
=10
35
30
25
20
15
10
5
18A
35
30
25
20
15
10
5
=
VGS I =
VGS
, ID
.
0
0
1
2
3
4
5
6
7
8
9
10 11 12 13 14 15 16
0
--50
--25
0
25
50
75
100
125
150
° C
5 °
--2
° C
Tc
7
7
5
3
2
10
7
5
Gate-to-Source Voltage, VGS -- V
| y fs | -- ID
VDS=10V
Single pulse
25
C
=
75
IT14743
100
5
3
2
10
7
5
3
2
1.0
7
5
3
2
VGS=0V
Single pulse
Case Temperature, Tc -- ° C
IS -- VSD
IT14744
3
2
1.0
7
0.1
7
5
3
2
0.01
7
5
3
2
5
0.1
2
3
5
7 1.0
2
3
5
7 10
2
3
5
0.001
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
7
5
VDD=30V
VGS=10V
Drain Current, ID -- A
SW Time -- ID
IT14745
5
3
Diode Forward Voltage, VSD -- V
Ciss, Coss, Crss -- VDS
IT14746
f=1MHz
3
2
100
td(off)
2
1000
7
Ciss
7
5
3
2
10
tf
tr
td(on)
5
3
2
100
7
Coss
Crss
7
0.1
2
3
5 7 1.0
2
3
5 7 10
2
3
5 7 100
5
0
10
20
30
40
50
60
Drain Current, ID -- A
IT14747
Drain-to-Source Voltage, VDS -- V
IT14748
No. A1507-3/7
发布紧急采购，3分钟左右您将得到回复。
相关PDF资料
ATP213-TL-H
MOSFET N-CH 60V 50A ATPAK
ATP214-TL-H
MOSFET N-CH 60V 75A ATPAK
ATP216-TL-H
MOSFET N-CH 50V 35A ATPAK
ATP218-TL-H
MOSFET N-CH 30V 100A ATPAK
ATP301-TL-H
MOSFET P-CH 100V 28A ATPAK
ATP302-TL-H
MOSFET N-CH 60V 70A ATPAK
ATP404-TL-H
MOSFET N-CH 60V 95A ATPAK
ATP405-TL-H
MOSFET N-CH 100V 40A ATPAK
相关代理商/技术参数
ATP213
制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications
ATP213_12
制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications
ATP213-TL-H
功能描述:MOSFET N-CH 60V 50A ATPAK RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件
ATP214
制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:N-Channel Silicon MOSFET General-Purpose Switching Device Applications
ATP214_12
制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications
ATP214-TL-H
功能描述:MOSFET SWITCHING DEVICE
RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
ATP216
制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications
ATP216_12
制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications